View PHC21025_146602.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
PHC21025 Complementary enhancement mode MOS transistors
Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
FEATURES * High-speed switching * No secondary breakdown * Very low on-resistance. APPLICATIONS * Motor and actuator driver * Power management * Synchronized rectification. DESCRIPTION One N-channel and one P-channel enhancement mode MOS transistor in an 8-pin plastic SOT96-1 (SO8) package. CAUTION
1
handbook, halfpage
PHC21025
PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s1 g1 s2 g2 d2 d2 d1 d1 DESCRIPTION source 1 gate 1 source 2 gate 2 drain 2 drain 2 drain 1 drain 1
d1 d1 5
d2 d2
8
The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling.
4 s1 g1 s2 g2
MAM118
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL Per channel VDS drain-source voltage (DC) N-channel P-channel VSD source-drain diode forward voltage N-channel P-channel VGSO VGSth gate-source voltage (DC) gate-source threshold voltage N-channel P-channel ID drain current (DC) N-channel P-channel RDSon drain-source on-state resistance N-channel P-channel Ptot 1997 Jun 20 total power dissipation VGS = 10 V; ID = 2.2 A VGS = -10 V; ID = -1 A Ts = 80 C 2 - - - 0.1 0.25 2 W - - 3.5 -2.3 A A VDS = VGS; ID = 1 mA VDS = VGS ; ID = -1 mA 1 -1 2.8 -2.8 IS = 1.25 A IS = -1.25 A open drain - - - 1.2 -1.6 20 V V V V V V - - 30 -30 V V PARAMETER CONDITIONS MIN. MAX. UNIT
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per channel VDS drain-source voltage (DC) N-channel P-channel VGSO ID gate-source voltage (DC) drain current (DC) N-channel P-channel IDM peak drain current N-channel P-channel Ptot total power dissipation Ts = 80 C; note 2 Tamb = 25 C; note 3 Tamb = 25 C; note 4 Tamb = 25 C; note 5 Tstg Tj IS storage temperature operating junction temperature Ts 80 C - - note 1 - - note 1 - - - - - - -65 - open drain Ts 80 C - - - - - PARAMETER CONDITIONS MIN.
PHC21025
MAX.
UNIT
30 -30 20 3.5 -2.3 14 -10 2 2 1 1.3 +150 150
V V V A A A A W W W W C C
Source-drain diode source current (DC) N-channel P-channel ISM peak pulsed source current N-channel P-channel Notes 1. Pulse width and duty cycle limited by maximum junction temperature. 2. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 2 W at the same time. 3. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 27.5 K/W. 4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. 5. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with an Rth a-tp (ambient to tie-point) of 90 K/W. 1.5 -1.25 6 -5 A A A A
1997 Jun 20
3
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PHC21025
handbook, halfpage
2.5
MLB836
P tot (W)
2 10 handbook, halfpage
MLB833 - 1
2.0
ID (A) 10 (1) tp = 10 s
1.5
1
1.0
1 ms P
= T
tp DC 0.1 s
0.5
10
1
tp
0 0 50 100 150 T s ( C)
o
t T
200
10
2
10
1
1
10
V
DS
(V)
10 2
= 0.01. Ts = 80 C. (1) RDSon limitation.
Fig.2 Power derating curve.
Fig.3 SOAR; N-channel.
10 2 handbook, halfpage ID (A) 10 (1)
MBE155
tp = 10 s
1 P 10
1
1 ms
= T
tp DC 0.1 s
tp T 10
2 1
t
10
1
10
V
DS
(V)
10 2
= 0.01. Ts = 80 C. (1) RDSon limitation.
Fig.4 SOAR; P-channel.
1997 Jun 20
4
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point VALUE 35
PHC21025
UNIT K/W
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per channel V(BR)DSS drain-source breakdown voltage N-channel P-channel VGSth gate-source threshold voltage N-channel P-channel IDSS drain-source leakage current N-channel P-channel IGSS gate leakage current N-channel P-channel IDon on-state drain current N-channel P-channel RDSon drain-source on-state resistance N-channel P-channel yfs forward transfer admittance N-channel P-channel Ciss input capacitance N-channel P-channel Coss output capacitance N-channel P-channel VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz - - 140 140 - - pF pF VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz - - 250 250 - - pF pF VDS = 20 V; ID = 2.2 A VDS = -20 V; ID = -1 A 2 1 4.5 2 - - S S VGS = 4.5 V; ID = 1 A VGS = 10 V; ID = 2.2 A VGS = -4.5 V; ID = - 0.5 A VGS = -10 V; ID = -1 A - - - - 0.11 0.08 0.33 0.22 0.2 0.1 0.4 0.25 VGS = 10 V; VDS = 1 V VGS = 4.5 V; VDS = 5 V VGS = -10 V; VDS = -1 V VGS = -4.5 V; VDS = -5 V 3.5 2 -2.3 -1 - - - - - - - - A A A A VGS = 0; VDS = 24 V VGS = 0; VDS = -24 V VGS = 20 V; VDS = 0 - - - - 100 100 nA nA - - - - 100 -100 nA nA VGS = VDS ; ID = 1 mA VGS = VDS ; ID = -1 mA 1 -1 - - 2.8 -2.8 V V VGS = 0; ID = 10 A VGS = 0; ID = -10 A 30 -30 - - - - V V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
1997 Jun 20
5
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
SYMBOL Crss PARAMETER reverse transfer capacitance N-channel P-channel QG total gate charge N-channel P-channel QGS gate-source charge N-channel P-channel QGD gate-drain charge N-channel P-channel Switching times ton turn-on time N-channel P-channel toff turn-off time N-channel P-channel Source-drain diode VSD source-drain diode forward voltage N-channel P-channel trr reverse recovery time N-channel P-channel IS = 1.25 A; di/dt = 100 A/s IS = -1.25 A; di/dt = 100 A/s - - 35 VGD = 0; IS = 1.25 A VGD = 0; IS = -1.25 A - - - - VGS = 10 to 0 V; VDD = 20 V; ID = 1 A; RL = 20 VGS = -10 to 0 V; VDD = -20 V; ID = -1 A; RL = 20 - - 25 50 VGS = 0 to 10 V; VDD = 20 V; ID = 1 A; RL = 20 VGS = 0 to -10 V; VDD = -20 V; ID = -1 A; RL = 20 - - 15 20 VGS = 10 V; VDS = 15 V; ID = 2.3 A - VGS = 10 V; VDS = 15 V; ID = 2.3 A - 1 1 VGS = 10 V; VDS = 15 V; ID = 2.3 A - 10 10 VGS = 0; VDS = 20 V; f = 1 MHz VGS = 0; VDS = -20 V; f = 1 MHz - - 50 50 CONDITIONS MIN.
PHC21025
TYP.
MAX. UNIT - - 30 25 - - - - pF pF nC nC nC nC nC nC
VGS = -10 V; VDS = -15 V; ID = -2.3 A -
VGS = -10 V; VDS = -15 V; ID = -2.3 A -
2.5 3
VGS = -10 V; VDS = -15 V; ID = -2.3 A -
40 80
ns ns
140 140
ns ns
1.2 -1.6 100 200
V V ns ns
150
1997 Jun 20
6
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PHC21025
MBE137
handbook, halfpage
600
MBE144
handbook, halfpage
600
C (pF) 400
C (pF) 400
C iss 200 Coss C rss 0 0 10 20 V DS (V) 30
0 0 10 20 200
C iss
Coss C rss
V DS (V)
30
VGS = 0. Tj = 25 C.
VGS = 0. Tj = 25 C.
Fig.5
Capacitance as a function of drain-source voltage; N-channel; typical values.
Fig.6
Capacitance as a function of drain source voltage; P-channel; typical values.
handbook, halfpage
MBE142
V handbook, halfpage GS = ID (A) 12 5V 10 V 6V
16
10 ID (A) 8
MBE154
VGS = 10 V
7.5 V
6V
6 8 4.5 V 4 4V 4 3.5 V 3V 0 0 2 4 6 8 10 V DS (V) 12 0 0 2 4 6 8 2
5V 4.5 V 4V 3.5 V 3V 2.5 V 10 V DS (V) 12
Tj = 25 C.
Tj = 25 C.
Fig.7
Output characteristics; typical values; N-channel.
Fig.8
Output characteristics; typical values; P-channel.
1997 Jun 20
7
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PHC21025
MBE141
MBE157
handbook, halfpage
16
handbook, halfpage
10
ID (A) 12
ID (A) 8
6
8
4
4
2
0 0 2 4 6V 8 GS (V)
0 0 2 4 6 V GS (V) 8
VDS = 10 V. Tj = 25 C.
VDS = -10 V. Tj = 25 C.
Fig.9
Transfer characteristic; typical values; N-channel.
Fig.10 Transfer characteristic; typical values; P-channel.
handbook, halfpage
10
MBE136
VGS (V)
handbook, halfpage
10 VGS (V) 8
MBE145
8
6
6
4
4
2
2
0 0 2 4 6 Q (nC) 8 g
0 0 2 4 6 8 10 Q g (nC)
VDD = 15 V. ID = 3.5 A.
VDD = -15 V. ID = -2.3 A.
Fig.11 Gate-source voltage as a function of total gate charge; N-channel.
Fig.12 Gate-source voltage as a function of total gate charge; P-channel.
1997 Jun 20
8
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PHC21025
handbook, halfpage
6
MBE159
handbook, halfpage
6
MBE158
IS (A)
IS (A) 4 4
(1)
(2)
(3)
(1)
(2)
(3)
2
2
0 0 0.5 1 V SD (V) 1.5
0 0 0.5 1 1.5 V SD (V) VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -55 C. 2
VGD = 0. (1) Tj = 150 C. (2) Tj = 25 C. (3) Tj = -55 C.
Fig.13 Source current as a function of source-drain diode forward voltage; N-channel.
Fig.14 Source current as a function of source-drain diode forward voltage; P-channel.
104 handbook, halfpage RDSon (m)
(1)(2)(3)(4)(5)(6)
MDA217
104 handbook, halfpage
MDA165
RDSon (m)
(1) (2)(3) (4) (5)
103
103
102
10
0
2
4
6
8
10 VGS (V)
102
0
-2
-4
-6
-8 -10 VGS (V)
VDS ID x RDSon; Tj = 25 C. (1) ID = 0.1 A. (2) ID = 0.5 A. (3) ID = 1 A. (4) ID = 2.2 A. (5) ID = 3.5 A. (6) ID = 7 A.
-VDS -ID x RDSon; Tj = 25 C. (1) ID = -0.1 A. (2) ID = -0.5 A. (3) ID = -1 A. (4) ID = -2.3 A. (5) ID = -4.5 A.
Fig.15 Drain-source on-state resistance as a function of gate-source voltage; typical values; N-channel.
Fig.16 Drain-source on-state resistance as a function of gate-source voltage; typical values; P-channel.
1997 Jun 20
9
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PHC21025
handbook, halfpage
1.2
MBE138
handbook, halfpage
1.8
MBE139
k 1.1
k 1.6
(1)
1.0
1.4
(2)
0.9
1.2
0.8
1.0
0.7
0.8
0.6 50 0 50 100 T j ( C) V GSth at T j k = ------------------------------------V GSth at 25C Typical VGSth at ID = 1 mA; VDS =VGS = VGSth.
o
0.6 150 50 0 50 100 R DSon at T j k = ---------------------------------------R DSon at 25 C Typical RDSon at: (1) ID = 2.2 A; VGS = 10 V. (2) ID = 1 A; VGS = 4.5 V. T j ( C)
o
150
Fig.17 Temperature coefficient of gate-source threshold voltage; N and P-channels.
Fig.18 Temperature coefficient of drain-source on-resistance; N-channel.
handbook, halfpage
1.8
MBE146
k 1.6
(1) (2)
1.4
1.2
1.0
0.8
0.6 50 0 50 100 R DSon at T j k = ---------------------------------------R DSon at 25 C Typical RDSon at: (1) ID = -1 A; VGS = -10 V. (2) ID = -0.5 A; VGS = -4.5 V. T j ( C)
o
150
Fig.19 Temperature coefficient of drain-source on-resistance; P-channel.
1997 Jun 20
10
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PHC21025
10 2
MBE152
R th j-s (K/W)
= 0.75 0.5
10
0.33 0.2 0.1 0.05
1
0.02 0.01 0
P
= T
tp
tp T
t
10
1
10
6
10
5
10
4
10
3
10
2
10
1
t p (s)
1
Fig.20 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
1997 Jun 20
11
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
PACKAGE OUTLINE SO8: plastic small outline package; 8 leads; body width 3.9 mm
PHC21025
SOT96-1
D
E
A X
c y HE vMA
Z 8 5
Q A2 A1 pin 1 index Lp 1 e bp 4 wM L detail X (A 3) A
0
2.5 scale
5 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 1.75 A1 0.25 0.10 A2 1.45 1.25 A3 0.25 0.01 bp 0.49 0.36 c 0.25 0.19 D (1) 5.0 4.8 0.20 0.19 E (2) 4.0 3.8 0.16 0.15 e 1.27 HE 6.2 5.8 L 1.05 Lp 1.0 0.4 Q 0.7 0.6 v 0.25 0.01 w 0.25 0.01 y 0.1 Z (1) 0.7 0.3
0.010 0.057 0.069 0.004 0.049
0.019 0.0100 0.014 0.0075
0.244 0.039 0.028 0.050 0.041 0.228 0.016 0.024
0.028 0.004 0.012
8 0o
o
Notes 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT96-1 REFERENCES IEC 076E03S JEDEC MS-012AA EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-02-04 97-05-22
1997 Jun 20
12
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
PHC21025
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Jun 20
13
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
NOTES
PHC21025
1997 Jun 20
14
Philips Semiconductors
Product specification
Complementary enhancement mode MOS transistors
NOTES
PHC21025
1997 Jun 20
15
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd. Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Rua do Rocio 220, 5th floor, Suite 51, 04552-903 Sao Paulo, SAO PAULO - SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 829 1849 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/02/pp16
Date of release: 1997 Jun 20
Document order number:
9397 750 02509

▲Up To Search▲

Price & Availability of PHC21025

	To Download PHC21025 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .